@misc{indiciaeb2f87be2a67f,
  title = {Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates},
  author = {Guangnan Zhou and Zeyu Wan and Gaiying Yang and Yang Jiang and Robert Sokolovskij and Hongyu Yu and Guangrui and Xia},
  year = {2019},
  doi = {10.1109/ted.2020.2968596},
  url = {https://arxiv.org/abs/1908.00119},
  note = {Source identifier: 1908.00119}
}