@misc{indiciae67b8d7191ad8,
  title = {Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors},
  author = {Wei-Chih Cheng and Minghao He and Siqi Lei and Liang Wang and Jingyi Wu and Fanming Zeng and Qiaoyu Hu and Feng Zhao and Mansun Chan and Guangrui and Xia and Hongyu Yu},
  year = {2019},
  url = {https://arxiv.org/abs/1908.00125},
  note = {Source identifier: 1908.00125}
}