@misc{indiciae4d013d0bd594,
  title = {Electron and hole mobility of rutile GeO\$\_2\$ from first principles: an ultrawide-band-gap semiconductor for power electronics},
  author = {Kyle Bushick and Kelsey A. Mengle and Sieun Chae and Emmanouil Kioupakis},
  year = {2020},
  doi = {10.1063/5.0033284},
  url = {https://arxiv.org/abs/1911.09750},
  note = {Source identifier: 1911.09750}
}