TY  - RPRT
TI  - Electron and hole mobility of rutile GeO$_2$ from first principles: an ultrawide-band-gap semiconductor for power electronics
AU  - Kyle Bushick
AU  - Kelsey A. Mengle
AU  - Sieun Chae
AU  - Emmanouil Kioupakis
PY  - 2020
DO  - 10.1063/5.0033284
UR  - https://arxiv.org/abs/1911.09750
ID  - 1911.09750
ER  -