@misc{indiciae99fb2ddf6c10,
  title = {Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers},
  author = {Monia Spera and Domenico Corso and Salvatore Di Franco and Giuseppe Greco and Andrea Severino and Patrick Fiorenza and Filippo Giannazzo and Fabrizio Roccaforte},
  year = {2021},
  doi = {10.1016/j.mssp.2019.01.019},
  url = {https://arxiv.org/abs/2001.08021},
  note = {Source identifier: 2001.08021}
}