@misc{indiciaee662bab5acfd,
  title = {Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions},
  author = {Shoichi Sato and Masaaki Tanaka and Ryosho Nakane},
  year = {2020},
  doi = {10.1103/physrevb.102.035305},
  url = {https://arxiv.org/abs/2003.02415},
  note = {Source identifier: 2003.02415}
}