@misc{indiciaea24350014e65,
  title = {Topological Hall effect in single thick SrRuO3 layers induced by defect engineering},
  author = {Changan Wang and Ching-Hao Chang and Andreas Herklotz and Chao Chen and Fabian Ganss and Ulrich Kentsch and Deyang Chen and Xingsen Gao and Yu-Jia Zeng and Olav Hellwig and Manfred Helm and Sibylle Gemming and Ying-Hao Chu and Shengqiang Zhou},
  year = {2020},
  doi = {10.1002/aelm.202000184},
  url = {https://arxiv.org/abs/2004.11301},
  note = {Source identifier: 2004.11301}
}