@misc{indiciae387a586f8cf1,
  title = {Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT},
  author = {Fabrizio Roccaforte and Giuseppe Greco and Patrick Fiorenza},
  year = {2020},
  doi = {10.1109/smicnd.2018.8539756},
  url = {https://arxiv.org/abs/2004.11549},
  note = {Source identifier: 2004.11549}
}