TY  - RPRT
TI  - Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT
AU  - Fabrizio Roccaforte
AU  - Giuseppe Greco
AU  - Patrick Fiorenza
PY  - 2020
DO  - 10.1109/smicnd.2018.8539756
UR  - https://arxiv.org/abs/2004.11549
ID  - 2004.11549
ER  -