@misc{indiciae6884729fde93,
  title = {Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO\$\_2\$/4H-SiC MOSFETs},
  author = {Patrick Fiorenza and Filippo Giannazzo and Mario Saggio and Fabrizio Roccaforte},
  year = {2020},
  doi = {10.1063/5.0012399},
  url = {https://arxiv.org/abs/2004.14925},
  note = {Source identifier: 2004.14925}
}