@misc{indiciae3762a2b62094,
  title = {Simulation of Optimum values of device parameters to attain Peak to Valley current Ratio (PVCR) in Resonant tunneling diodes (RTD)},
  author = {Sushree Ipsita and Prasanta Kumar Mahapatra and Pradipta Panchadhyayee},
  year = {2020},
  doi = {10.1016/j.physb.2020.412788},
  url = {https://arxiv.org/abs/2005.03563},
  note = {Source identifier: 2005.03563}
}