@misc{indiciae010e3cd399d2,
  title = {Charge trap layer enabled positive tunable V\$\_\{fb\}\$ in \$β\$-Ga\$\_\{2\}\$O\$\_\{3\}\$ gate stacks for enhancement mode transistors},
  author = {Dipankar Biswas and Chandan Joishi and Jayeeta Biswas and Prabhans Tiwari and Saurabh Lodha},
  year = {2020},
  doi = {10.1063/5.0014813},
  url = {https://arxiv.org/abs/2005.05237},
  note = {Source identifier: 2005.05237}
}