@misc{indiciaea4dbf7dbad1d,
  title = {Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing},
  author = {Peng Cui and Meng Jia and Guangyang Lin and Jie Zhang and Lars Gundlach and Yuping Zeng},
  year = {2020},
  url = {https://arxiv.org/abs/2005.08422},
  note = {Source identifier: 2005.08422}
}