TY  - RPRT
TI  - Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
AU  - Peng Cui
AU  - Meng Jia
AU  - Guangyang Lin
AU  - Jie Zhang
AU  - Lars Gundlach
AU  - Yuping Zeng
PY  - 2020
UR  - https://arxiv.org/abs/2005.08422
ID  - 2005.08422
ER  -