@misc{indiciae744f9328d03e,
  title = {Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part II: Scalability to 10 nm Gate Length},
  author = {Shruti Mehrotra and S. Qureshi},
  year = {2020},
  url = {https://arxiv.org/abs/2007.02336},
  note = {Source identifier: 2007.02336}
}