TY  - RPRT
TI  - Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part II: Scalability to 10 nm Gate Length
AU  - Shruti Mehrotra
AU  - S. Qureshi
PY  - 2020
UR  - https://arxiv.org/abs/2007.02336
ID  - 2007.02336
ER  -