@misc{indiciaeece35d72631a,
  title = {2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure},
  author = {Ru Xu and Peng Chen and Menghan Liu and Jing Zhou and Yunfei Yang and Yimeng Li and Cheng Ge and Haocheng Peng and Bin Liu and Zili Xie and Rong Zhang and Youdou Zheng},
  year = {2020},
  doi = {10.1016/j.sse.2020.107953},
  url = {https://arxiv.org/abs/2007.03163},
  note = {Source identifier: 2007.03163}
}