@misc{indiciae3fe35465182a,
  title = {Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC},
  author = {Robert Karsthof and Marianne Etzelmüller Bathen and Augustinas Galeckas and Lasse Vines},
  year = {2020},
  doi = {10.1103/physrevb.102.184111},
  url = {https://arxiv.org/abs/2007.03985},
  note = {Source identifier: 2007.03985}
}