@misc{indiciaefb95523abcbc,
  title = {On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices},
  author = {Theresia Knobloch and Yury Yu. Illarionov and Fabian Ducry and Christian Schleich and Stefan Wachter and Thomas Müller and Michael Waltl and Mario Lanza and Mikhail I. Vexler and Mathieu Luisier and Tibor Grasser},
  year = {2020},
  doi = {10.1038/s41928-020-00529-x},
  url = {https://arxiv.org/abs/2008.04144},
  note = {Source identifier: 2008.04144}
}