@misc{indiciaeea86c8f0431e,
  title = {Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress},
  author = {P. Fiorenza and M. Alessandrino and B. Carbone and C. Di Martino and A. Russo and M. Saggio and C. Venuto and E. Zanetti and F. Giannazzo and F. Roccaforte},
  year = {2020},
  doi = {10.1088/1361-6528/ab5ff6},
  url = {https://arxiv.org/abs/2009.04835},
  note = {Source identifier: 2009.04835}
}