@misc{indiciae68bbcee59f7c,
  title = {Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress},
  author = {P. Fiorenza and M. Alessandrino and B. Carbone and C. Di Martino and A. Russo and M. Saggio and C. Venuto and E. Zanetti and C. Bongiorno and F. Giannazzo and F. Roccaforte},
  year = {2020},
  doi = {10.4028/www.scientific.net/msf.1004.433},
  url = {https://arxiv.org/abs/2009.04846},
  note = {Source identifier: 2009.04846}
}