@misc{indiciaeaa35215d2064,
  title = {Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides},
  author = {Hesham. H. Shaker and A. A. Saleh and Mohamed Refky Amin and S. E. D. Habib},
  year = {2020},
  url = {https://arxiv.org/abs/2009.12652},
  note = {Source identifier: 2009.12652}
}