TY  - RPRT
TI  - Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides
AU  - Hesham. H. Shaker
AU  - A. A. Saleh
AU  - Mohamed Refky Amin
AU  - S. E. D. Habib
PY  - 2020
UR  - https://arxiv.org/abs/2009.12652
ID  - 2009.12652
ER  -