TY  - RPRT
TI  - Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers
AU  - Yuta Seo
AU  - Satoru Masubuchi
AU  - Eisuke Watanabe
AU  - Momoko Onodera
AU  - Rai Moriya
AU  - Kenji Watanabe
AU  - Takashi Taniguchi
AU  - Tomoki Machida
PY  - 2020
DO  - 10.1063/5.0022557
UR  - https://arxiv.org/abs/2012.02416
ID  - 2012.02416
ER  -