@misc{indiciae6ed9f3f9d114,
  title = {Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V},
  author = {Mengwei Si and Zehao Lin and Adam Charnas and Peide D. Ye},
  year = {2020},
  doi = {10.1109/led.2020.3043430},
  url = {https://arxiv.org/abs/2012.04789},
  note = {Source identifier: 2012.04789}
}