TY  - RPRT
TI  - Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
AU  - Mengwei Si
AU  - Zehao Lin
AU  - Adam Charnas
AU  - Peide D. Ye
PY  - 2020
DO  - 10.1109/led.2020.3043430
UR  - https://arxiv.org/abs/2012.04789
ID  - 2012.04789
ER  -