@misc{indiciae3850781a6ec5,
  title = {Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations},
  author = {Patrick Fiorenza and Corrado Bongiorno and Filippo Giannazzo and Santi Alessandrino and Angelo Messina and Mario Saggio and Fabrizio Roccaforte},
  year = {2021},
  doi = {10.1016/j.apsusc.2021.149752},
  url = {https://arxiv.org/abs/2012.08829},
  note = {Source identifier: 2012.08829}
}