@misc{indiciae2706e892d745,
  title = {Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior},
  author = {Joao H. Quintino Palhares and Yann Beilliard and Fabien Alibart and Everton Bonturim and Daniel Z. de Florio and Fabio C. Fonseca and Dominique Drouin and Andre S. Ferlauto},
  year = {2021},
  url = {https://arxiv.org/abs/2012.09299},
  note = {Source identifier: 2012.09299}
}