@misc{indiciae8afbc713c41a,
  title = {Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier},
  author = {Maksym V. Strikha and Anatolii I. Kurchak and Anna N. Morozovska},
  year = {2020},
  url = {https://arxiv.org/abs/2012.11203},
  note = {Source identifier: 2012.11203}
}