@misc{indiciae31fe709ef36c,
  title = {Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?},
  author = {Mengwei Si and Yaoqiao Hu and Zehao Lin and Xing Sun and Adam Charnas and Dongqi Zheng and Xiao Lyu and Haiyan Wang and Kyeongjae Cho and Peide D. Ye},
  year = {2020},
  doi = {10.1021/acs.nanolett.0c03967},
  url = {https://arxiv.org/abs/2012.12433},
  note = {Source identifier: 2012.12433}
}