@misc{indiciaecc2dcf61be31,
  title = {High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures},
  author = {Yosuke Sasama and Taisuke Kageura and Masataka Imura and Kenji Watanabe and Takashi Taniguchi and Takashi Uchihashi and Yamaguchi Takahide},
  year = {2021},
  doi = {10.1038/s41928-021-00689-4},
  url = {https://arxiv.org/abs/2102.05982},
  note = {Source identifier: 2102.05982}
}