TY  - RPRT
TI  - Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
AU  - Jing Li
AU  - M. Goryca
AU  - K. Yumigeta
AU  - H. Li
AU  - S. Tongay
AU  - S. A. Crooker
PY  - 2021
DO  - 10.1103/physrevmaterials.5.044001
UR  - https://arxiv.org/abs/2103.05752
ID  - 2103.05752
ER  -