@misc{indiciae79dffea08b89,
  title = {Ferroelectric HfO\$\_2\$ Memory Transistors with High-\$κ\$ Interfacial Layer and Write Endurance Exceeding \$10\textasciicircum{}\{10\}\$ Cycles},
  author = {Ava Jiang Tan and Yu-Hung Liao and Li-Chen Wang and Jong-Ho Bae and Chenming Hu and Sayeef Salahuddin},
  year = {2021},
  url = {https://arxiv.org/abs/2103.08806},
  note = {Source identifier: 2103.08806}
}