TY  - RPRT
TI  - Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles
AU  - Ava Jiang Tan
AU  - Yu-Hung Liao
AU  - Li-Chen Wang
AU  - Jong-Ho Bae
AU  - Chenming Hu
AU  - Sayeef Salahuddin
PY  - 2021
UR  - https://arxiv.org/abs/2103.08806
ID  - 2103.08806
ER  -