@misc{indiciae63edadfa65a9,
  title = {First Demonstration of Robust Tri-Gate \textbackslash{}b\{eta\}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C},
  author = {Hagyoul Bae and Tae Joon Park and Jinhyun Noh and Wonil Chung and Mengwei Si and Shriram Ramanathan and Peide D. Ye},
  year = {2021},
  doi = {10.1088/1361-6528/ac3f11},
  url = {https://arxiv.org/abs/2105.01721},
  note = {Source identifier: 2105.01721}
}