@misc{indiciae58ff80d31f40,
  title = {Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing},
  author = {Toshiyuki Tabata and Karim and Huet and Fabien Rozé and Fulvio Mazzamuto and Bernard Sermage and Petros Kopalidis and Dwight Roh},
  year = {2021},
  doi = {10.1149/2162-8777/abe2ee},
  url = {https://arxiv.org/abs/2106.00946},
  note = {Source identifier: 2106.00946}
}