TY  - RPRT
TI  - Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
AU  - Toshiyuki Tabata
AU  - Karim
AU  - Huet
AU  - Fabien Rozé
AU  - Fulvio Mazzamuto
AU  - Bernard Sermage
AU  - Petros Kopalidis
AU  - Dwight Roh
PY  - 2021
DO  - 10.1149/2162-8777/abe2ee
UR  - https://arxiv.org/abs/2106.00946
ID  - 2106.00946
ER  -