@misc{indiciae32016c3a7be2,
  title = {Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering},
  author = {Guangnan Zhou and Fanming Zeng and Rongyu Gao and Qing Wang and Kai Cheng and Guangrui Xia and Hongyu Yu},
  year = {2021},
  url = {https://arxiv.org/abs/2106.01495},
  note = {Source identifier: 2106.01495}
}