TY  - RPRT
TI  - Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
AU  - Guangnan Zhou
AU  - Fanming Zeng
AU  - Rongyu Gao
AU  - Qing Wang
AU  - Kai Cheng
AU  - Guangrui Xia
AU  - Hongyu Yu
PY  - 2021
UR  - https://arxiv.org/abs/2106.01495
ID  - 2106.01495
ER  -