TY  - RPRT
TI  - Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures
AU  - V. M. Pudalov
AU  - M. E. Gershenson
PY  - 2021
DO  - 10.1103/physrevb.104.035407
UR  - https://arxiv.org/abs/2107.01411
ID  - 2107.01411
ER  -