@misc{indiciae29838fd4e298,
  title = {Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure},
  author = {Fengbin Tian and Shujing Zhao and Hao Xu and Jinjuan Xiang and Tingting Li and Wenjuan Xiong and Jiahui Duan and Junshuai Chai and Kai Han and Xiaolei Wang and Wenwu Wang and Tianchun Ye},
  year = {2021},
  doi = {10.1109/ted.2021.3114663},
  url = {https://arxiv.org/abs/2107.03854},
  note = {Source identifier: 2107.03854}
}