@misc{indiciaee12c6eadb29d,
  title = {High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing},
  author = {Ru Xu and Peng Chen and Jing Zhou and Yimeng Li and Yuyin Li and Tinggang Zhu and Kai Cheng and Dunjun Chen and Zili Xie and Jiandong Ye and Bin Liu and Xiangqian Xiu and Ping Han and Yi Shi and Rong Zhang and Youdou Zheng},
  year = {2021},
  url = {https://arxiv.org/abs/2108.06679},
  note = {Source identifier: 2108.06679}
}