@misc{indiciae46a64b537474,
  title = {Superior Resistance Switching in Monolayer MoS2 Channel Based Gated Binary Resistive RAM via Gate-Bias Dependence and a Unique Forming Process},
  author = {Ansh and Mayank Shrivastava},
  year = {2021},
  doi = {10.1088/1361-6463/ac3281},
  url = {https://arxiv.org/abs/2109.12937},
  note = {Source identifier: 2109.12937}
}