TY  - RPRT
TI  - Superior Resistance Switching in Monolayer MoS2 Channel Based Gated Binary Resistive RAM via Gate-Bias Dependence and a Unique Forming Process
AU  - Ansh
AU  - Mayank Shrivastava
PY  - 2021
DO  - 10.1088/1361-6463/ac3281
UR  - https://arxiv.org/abs/2109.12937
ID  - 2109.12937
ER  -