@misc{indiciae9ffb0bec6ef1,
  title = {Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)},
  author = {Guoliang Yu and Anlian Pan and Mingxing Chen},
  year = {2021},
  doi = {10.1103/physrevb.104.224102},
  url = {https://arxiv.org/abs/2112.04077},
  note = {Source identifier: 2112.04077}
}