@misc{indiciaecd77a5e89965,
  title = {Field-Effect Transistor Based on MoSi\$\_2\$N\$\_4\$ and WSi\$\_2\$N\$\_4\$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties},
  author = {Nayereh Ghobadi and Manouchehr Hosseini and Shoeib Babaee Touski},
  year = {2021},
  doi = {10.1109/ted.2021.3138377},
  url = {https://arxiv.org/abs/2112.04171},
  note = {Source identifier: 2112.04171}
}