TY  - RPRT
TI  - Field-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
AU  - Nayereh Ghobadi
AU  - Manouchehr Hosseini
AU  - Shoeib Babaee Touski
PY  - 2021
DO  - 10.1109/ted.2021.3138377
UR  - https://arxiv.org/abs/2112.04171
ID  - 2112.04171
ER  -