@misc{indiciae04007ac874a2,
  title = {Growth-related formation mechanism of I\$\_3\$-type basal stacking fault in epitaxially grown hexagonal Ge-2H},
  author = {Laetitia Vincent and Elham M. T. Fadaly and Charles Renard and Wouter H. J. Peeters and Marco Vettori and Federico Panciera and Daniel Bouchier and Erik PA. M Bakkers and Marcel A. Verheijen},
  year = {2022},
  url = {https://arxiv.org/abs/2201.01999},
  note = {Source identifier: 2201.01999}
}