@misc{indiciae3dcfb857f5b9,
  title = {Theoretical investigation of vacancy related defects at 4H-SiC(000\$\textbackslash{}bar\{1\}\$)/SiO\$\_2\$ interface after wet oxidation},
  author = {Mukai Tsunasaki and Tomoya Ono and Mitsuharu Uemoto},
  year = {2022},
  doi = {10.35848/1347-4065/ac5a97},
  url = {https://arxiv.org/abs/2202.06067},
  note = {Source identifier: 2202.06067}
}