TY  - RPRT
TI  - Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
AU  - Mukai Tsunasaki
AU  - Tomoya Ono
AU  - Mitsuharu Uemoto
PY  - 2022
DO  - 10.35848/1347-4065/ac5a97
UR  - https://arxiv.org/abs/2202.06067
ID  - 2202.06067
ER  -